วารสารวิจัย มข.
ปีที่ 20 | ฉบับที่ 3 กรกฎาคม - กันยายน 2558
ชื่อเรื่อง :
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Title :
Calculation of structural and optical properties of silicon quantum dots: tuneable absorption energy and negative electron affinity
ผู้แต่ง :
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Authors :
Ruhan Thirayathorn, Pairot Moontragoon, Vittaya Amornkitbamrung, Santi Meansiri3, Zoran Ikonic
บทคัดย่อ :
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Abstract :
The structural and optical properties of hydrogen-terminated silicon quantum dots
were investigated by using the Gaussian 09 program. The models of silicon quantum dots
assume that the silicon atoms are covalently bonded in diamond crystal structure, with
quantum dot diameters varying from 0.8 to 1.6 nanometers. The bonds of silicon atoms at
the surface were terminated by hydrogen atoms. The calculations of optimized structures
and ground state electronic properties for the quantum dots have been performed using
Hartree-Fock with 6-31G* basis set, and the exited states were then calculated by using
time-dependent density functional theory (TDDFT) with (B3LYP) hybrid functional. The
results show that the hydrogen-terminated silicon quantum dots have tuneable absorption
energy, depending on particle size, and the larger particles have lower absorption energy.
The calculated UV-VIS spectrum results show that with the quantum dots diameter changing
from 0.8 nm to 1 nm to 1.2 nm the absorption peak moves from 5.23 eV (238 nm) to 4.68
eV (264 nm) to 4.03 eV (308 nm). Moreover, the hydrogen-capped silicon nanocrystals
also show negative electron affinity (NEA).
คำสำคัญ :
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Keywords :
Optoelectronics; Colloidal silicon quantum dots; Negative electron affinity.